OPTIMIZATION OF SIMOX STRUCTURES FORMED BY ION-BEAM SYNTHESIS

被引:8
作者
REESON, KJ
STEPHENS, KG
HEMMENT, PLF
机构
关键词
D O I
10.1016/0168-583X(89)90188-2
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
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页码:290 / 295
页数:6
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共 16 条
[1]   DIFFUSION OF SILICON IN AMORPHOUS SILICA [J].
BREBEC, G ;
SEGUIN, R ;
SELLA, C ;
BEVENOT, J ;
MARTIN, JC .
ACTA METALLURGICA, 1980, 28 (03) :327-333
[2]   HIGH-QUALITY SI-ON-SIO2 FILMS BY LARGE DOSE OXYGEN IMPLANTATION AND LAMP ANNEALING [J].
CELLER, GK ;
HEMMENT, PLF ;
WEST, KW ;
GIBSON, JM .
APPLIED PHYSICS LETTERS, 1986, 48 (08) :532-534
[3]  
COLINGE JP, 1988, EUROPEAN SOI 88 WORK
[4]   FORMATION OF BURIED OXIDE LAYERS BY HIGH-DOSE IMPLANTATION OF OXYGEN IONS IN SILICON [J].
DAS, K ;
BUTCHER, JB ;
ANAND, KV .
JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (04) :635-654
[5]   MEASUREMENT AND MODELING OF CIRCUIT SPEED OF CMOS ON OXYGEN-IMPLANTED SOI [J].
DAVIS, JR ;
HOPPER, GF ;
REESON, KJ ;
HEMMENT, PLF .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1987, 34 (08) :1713-1718
[6]   DEPENDENCE OF SILICON-ON-INSULATOR TRANSISTOR PARAMETERS ON OXYGEN IMPLANTATION TEMPERATURE [J].
DAVIS, JR ;
TAYLOR, MR ;
SPILLER, GDT ;
SKEVINGTON, PJ ;
HEMMENT, PLF .
APPLIED PHYSICS LETTERS, 1986, 48 (19) :1279-1281
[7]  
ENNIS TJ, 1987, HEMMENT PHYSICS TECH
[8]  
HARBEKE G, 1987, OCT SOI WORKSH DUR
[9]  
MARGAIL J, 1985, ENERGY BEAM SOLID IN, P519
[10]  
MARGAIL J, 1987, THESIS U GRENOBLE