MEASUREMENT AND MODELING OF CIRCUIT SPEED OF CMOS ON OXYGEN-IMPLANTED SOI

[1] Chen C.-E., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P702

[2] DEPENDENCE OF SILICON-ON-INSULATOR TRANSISTOR PARAMETERS ON OXYGEN IMPLANTATION TEMPERATURE [J]. APPLIED PHYSICS LETTERS, 1986, 48 (19) : 1279 - 1281

[3] DEDIC HJ, COMMUNICATION

[4] SILICON-ON-INSULATOR CMOS TRANSISTORS IN DUAL ELECTRON-BEAM RECRYSTALLIZED POLYSILICON [J]. ELECTRONICS LETTERS, 1984, 20 (12) : 500 - 501

[5] MICROSTRUCTURE OF SILICON IMPLANTED WITH HIGH-DOSE OXYGEN IONS [J]. APPLIED PHYSICS LETTERS, 1985, 46 (11) : 1064 - 1066

[6] LIM HK, 1983, IEEE T ELECTRON DEV, V30, P1244

[7] LIM HK, 1984, IEEE T ELECTRON DEV, V31, P1251

[8] MILLER JM, 1919, NBS RES PAPERS, V13, P367

[9] MOLE PJ, 1986, 2ND INT C SIM SEM DE

[10] ELECTRIC-FIELD-SHIELDING LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON [J]. ELECTRONICS LETTERS, 1983, 19 (15) : 568 - 570

[1] Chen C.-E., 1984, International Electron Devices Meeting. Technical Digest (Cat. No. 84CH2099-0), P702

[2] DEPENDENCE OF SILICON-ON-INSULATOR TRANSISTOR PARAMETERS ON OXYGEN IMPLANTATION TEMPERATURE [J]. APPLIED PHYSICS LETTERS, 1986, 48 (19) : 1279 - 1281

[3] DEDIC HJ, COMMUNICATION

[4] SILICON-ON-INSULATOR CMOS TRANSISTORS IN DUAL ELECTRON-BEAM RECRYSTALLIZED POLYSILICON [J]. ELECTRONICS LETTERS, 1984, 20 (12) : 500 - 501

[5] MICROSTRUCTURE OF SILICON IMPLANTED WITH HIGH-DOSE OXYGEN IONS [J]. APPLIED PHYSICS LETTERS, 1985, 46 (11) : 1064 - 1066

[6] LIM HK, 1983, IEEE T ELECTRON DEV, V30, P1244

[7] LIM HK, 1984, IEEE T ELECTRON DEV, V31, P1251

[8] MILLER JM, 1919, NBS RES PAPERS, V13, P367

[9] MOLE PJ, 1986, 2ND INT C SIM SEM DE

[10] ELECTRIC-FIELD-SHIELDING LAYERS FORMED BY OXYGEN IMPLANTATION INTO SILICON [J]. ELECTRONICS LETTERS, 1983, 19 (15) : 568 - 570