FORMATION OF BURIED EPITAXIAL CO SILICIDES BY ION-IMPLANTATION

[1] FORMATION OF THIN-FILMS OF COSI2 - NUCLEATION AND DIFFUSION MECHANISMS [J]. THIN SOLID FILMS, 1985, 128 (3-4) : 283 - 297

[2] KOHLHOF K, 1988, IN PRESS NATO ASI SE

[3] KINETICS OF COSI2 FROM EVAPORATED SILICON [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (04): : 249 - 251

[4] ELECTRICAL RESISTIVITY STUDY OF LATTICE DEFECTS INTRODUCED IN COPPER BY 1.25-MEV ELECTRON IRRADIATION AT 80-DEGREES-K [J]. PHYSICAL REVIEW, 1956, 103 (05): : 1193 - 1202

[5] TRANSISTOR EFFECT IN MONOLITHIC SI/COSI2/SI EPITAXIAL STRUCTURES [J]. ELECTRONICS LETTERS, 1984, 20 (19) : 762 - 764

[6] SANCHEZ FH, 1986, MATERIALS RES SOC S, V51, P439

[7] TUNG RT, 1986, MATER RES SOC S P, V67, P211

[8] MESOTAXY - SINGLE-CRYSTAL GROWTH OF BURIED COSI2 LAYERS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (02) : 95 - 97

[9] WHITE AE, 1987, MATER RES SOC S P, V74, P481

[10] WHITE AE, 1988, MATER RES SOC S P, V100, P3

[1] FORMATION OF THIN-FILMS OF COSI2 - NUCLEATION AND DIFFUSION MECHANISMS [J]. THIN SOLID FILMS, 1985, 128 (3-4) : 283 - 297

[2] KOHLHOF K, 1988, IN PRESS NATO ASI SE

[3] KINETICS OF COSI2 FROM EVAPORATED SILICON [J]. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1984, 34 (04): : 249 - 251

[4] ELECTRICAL RESISTIVITY STUDY OF LATTICE DEFECTS INTRODUCED IN COPPER BY 1.25-MEV ELECTRON IRRADIATION AT 80-DEGREES-K [J]. PHYSICAL REVIEW, 1956, 103 (05): : 1193 - 1202

[5] TRANSISTOR EFFECT IN MONOLITHIC SI/COSI2/SI EPITAXIAL STRUCTURES [J]. ELECTRONICS LETTERS, 1984, 20 (19) : 762 - 764

[6] SANCHEZ FH, 1986, MATERIALS RES SOC S, V51, P439

[7] TUNG RT, 1986, MATER RES SOC S P, V67, P211

[8] MESOTAXY - SINGLE-CRYSTAL GROWTH OF BURIED COSI2 LAYERS [J]. APPLIED PHYSICS LETTERS, 1987, 50 (02) : 95 - 97

[9] WHITE AE, 1987, MATER RES SOC S P, V74, P481

[10] WHITE AE, 1988, MATER RES SOC S P, V100, P3