DETERMINATION OF THE GEOMETRICAL CONFIGURATION OF BI ON GAAS (110) BY X-RAY STANDING-WAVE TRIANGULATION

被引：11

作者：

HERRERAGOMEZ, A

KENDELEWICZ, T

WOICIK, JC

MIYANO, KE

PIANETTA, P

SOUTHWORTH, S

COWAN, PL

KARLIN, BA

SPICER, WE

机构：

[1] NATL INST STAND & TECHNOL,GAITHERSBURG,MD 20899

[2] TULANE UNIV,DEPT PHYS,NEW ORLEANS,LA 70118

[3] ARGONNE NATL LAB,ARGONNE,IL 60439

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1993年 / 11卷 / 04期

关键词：

D O I：

10.1116/1.578332

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Triangulation from x-ray standing wave applied to three Bragg planes, together with symmetry considerations, have established the geometrical structure of epitaxial Bi overlayers on GaAs (110). Our results are consistent with the epitaxial continued layer structure model. Our analysis is based on prior experimental results that indicate two equally populated Bi sites.

引用

页码：2354 / 2358

页数：5

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