ELECTRONIC AND STRUCTURAL-PROPERTIES OF A DISCOMMENSURATE MONOLAYER SYSTEM - GAAS(110)-(1X1)BI

被引：80

作者：

MCLEAN, AB

FEENSTRA, RM

TALEBIBRAHIMI, A

LUDEKE, R

机构：

来源：

PHYSICAL REVIEW B | 1989年 / 39卷 / 17期

关键词：

D O I：

10.1103/PhysRevB.39.12925

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：12925 / 12928

页数：4

共 23 条

[1] ELECTRON-STATES OF AN SB-ORDERED OVERLAYER ON GAAS(110) [J].

BERTONI, CM ;

CALANDRA, C ;

MANGHI, F ;

MOLINARI, E .

PHYSICAL REVIEW B, 1983, 27 (02) :1251-1258

[2] INTERFACE FORMATION OF GAAS WITH SI(100), SI(111), AND GE(111) - CORE-LEVEL SPECTROSCOPY FOR MONOLAYER COVERAGES OF GAAS, GA, AND AS [J].

BRINGANS, RD ;

OLMSTEAD, MA ;

UHRBERG, RIG ;

BACHRACH, RZ .

PHYSICAL REVIEW B, 1987, 36 (18) :9569-9580

[3] DYNAMICAL ANALYSIS OF LOW-ENERGY ELECTRON-DIFFRACTION INTENSITIES FROM GAAS(110)-P(1X1)-SB(1ML) [J].

DUKE, CB ;

PATON, A ;

FORD, WK ;

KAHN, A ;

CARELLI, J .

PHYSICAL REVIEW B, 1982, 26 (02) :803-814

[4] FERMI-LEVEL PINNING AT THE SB/GAAS(110) SURFACE STUDIED BY SCANNING TUNNELING SPECTROSCOPY [J].

FEENSTRA, RM ;

MARTENSSON, P .

PHYSICAL REVIEW LETTERS, 1988, 61 (04) :447-450

[5] DELOCALIZATION EFFECTS AT METAL-SEMICONDUCTOR INTERFACES [J].

LUDEKE, R ;

JEZEQUEL, G ;

TALEBIBRAHIMI, A .

PHYSICAL REVIEW LETTERS, 1988, 61 (05) :601-604

[6]

LUDEKE R, IN PRESS J VAC SCI B

[7] SB OVERLAYERS ON (110) SURFACES OF III-V-SEMICONDUCTORS - STRUCTURE AND BONDING [J].

MAILHIOT, C ;

DUKE, CB ;

CHADI, DJ .

PHYSICAL REVIEW LETTERS, 1984, 53 (22) :2114-2116

[8] BONDING AND SURFACE ELECTRONIC-STRUCTURE OF AN SB OVERLAYER ON GAP(110) [J].

MANGHI, F ;

CALANDRA, C ;

MOLINARI, E .

SURFACE SCIENCE, 1987, 184 (03) :449-462

[9] GEOMETRIC AND ELECTRONIC-STRUCTURE OF ANTIMONY ON THE GAAS(110) SURFACE STUDIED BY SCANNING TUNNELING MICROSCOPY [J].

MARTENSSON, P ;

FEENSTRA, RM .

PHYSICAL REVIEW B, 1989, 39 (11) :7744-7753

[10]

MARTENSSON P, 1986, PHYS REV B, V33, P7399, DOI 10.1103/PhysRevB.33.7399

← 1 2 3 →