Catalytic control of anisotropic silicon etching

被引:12
作者
Linde, HG
Austin, LW
机构
关键词
anisotropic etching; catalysts; silicon;
D O I
10.1016/0924-4247(96)80035-5
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A wide variety of oxidative catalysts have been tested in altering the wet chemical etching of the three major crystal faces of silicon, using a solution of gallic acid-ethanolamine-water. Significant variations in etch selectivity occur, where both the concentration and the nature of the catalyst are important. The results are useful in the micromachining of silicon.
引用
收藏
页码:181 / 185
页数:5
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