SUPERCOOLING AND NUCLEATION OF SILICON AFTER LASER MELTING

被引：146

作者：

STIFFLER, SR ^{[1
]}

THOMPSON, MO ^{[1
]}

PEERCY, PS ^{[1
]}

机构：

[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185

来源：

PHYSICAL REVIEW LETTERS | 1988年 / 60卷 / 24期

关键词：

D O I：

10.1103/PhysRevLett.60.2519

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：2519 / 2522

页数：4

共 24 条

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[14]

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[15] SILICON MELT, REGROWTH, AND AMORPHIZATION VELOCITIES DURING PULSED LASER IRRADIATION [J].

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[16] MELTING TEMPERATURE AND EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS-SILICON DURING PULSED LASER IRRADIATION [J].

THOMPSON, MO ;

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MAYER, JW ;

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[17] MELT DYNAMICS OF SILICON-ON-SAPPHIRE DURING PULSED LASER ANNEALING [J].

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MAYER, JW ;

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[18]

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[19]

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[20] CRYSTALLIZATION INSTABILITY AT THE AMORPHOUS-SILICON LIQUID-SILICON INTERFACE [J].

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PEERCY, PS .

PHYSICAL REVIEW LETTERS, 1987, 58 (26) :2782-2785

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