DIRECT LIQUID-PHASE EPITAXIAL-GROWTH OF HIGH-QUALITY INP ON (111)A ORIENTED IN0.53GA0.47AS

被引：19

作者：

NAKAJIMA, K

YAMAZAKI, S

AKITA, K

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 61卷 / 03期

关键词：

D O I：

10.1016/0022-0248(83)90182-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：535 / 545

页数：11

共 24 条

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[8] A HIGH-GAIN IN0.53GA0.47AS-INP AVALANCHE PHOTO-DIODE WITH NO TUNNELING LEAKAGE CURRENT [J].

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