10 GBIT/S HIGH-SENSITIVITY LOW ERROR RATE DECISION CIRCUIT IMPLEMENTED WITH C-DOPED ALGAAS/GAAS HBTS

被引：6

作者：

MONTGOMERY, RK

SMITH, PR

REN, F

FULLOWAN, TR

ABERNATHY, CR

KOPF, RF

PEARTON, SJ

LOTHIAN, J

WISK, P

NOTTENBURG, RN

机构：

[1] AT&T Bell Laboratories, Murray Hill, New Jersey

来源：

ELECTRONICS LETTERS | 1991年 / 27卷 / 11期

关键词：

SEMICONDUCTOR DEVICES AND MATERIALS; INTEGRATED CIRCUITS;

D O I：

10.1049/el:19910609

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A 10 Gbit/s decision circuit has been implemented using AlGaAs/GaAs HBTs with a carbon doped base region. The circuit has an ambiguity level of 27 mV peak to peak with a 240-degrees phase margin at 10 Gbit/s. The error ratio was less than 10(-14) for 100 mV peak to peak input data using a 2(23) - 1 PRBS.

引用

页码：976 / 978

页数：3

共 6 条

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