NITRIDATION OF SI (100) MADE BY RADIOFREQUENCY PLASMA AS STUDIED BY INSITU ANGULAR RESOLVED X-RAY PHOTOELECTRON-SPECTROSCOPY

被引：32

作者：

ERMOLIEFF, A ^{[1
]}

BERNARD, P ^{[1
]}

MARTHON, S ^{[1
]}

DACOSTA, JC ^{[1
]}

机构：

[1] UNIV BRASILIA FIS TECN,DEPT ENGN ELECT,BR-70910 BRASILIA,DF,BRAZIL

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 09期

关键词：

D O I：

10.1063/1.337729

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3162 / 3166

页数：5

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[31] COMPOSITION AND ELECTRON STRESS EFFECTS IN SILICON-NITRIDE THIN-FILMS MADE BY THERMAL GROWTH AND CHEMICAL ETCHING OF LPCVD MNOS STRUCTURES AS STUDIED BY X-RAY PHOTO-ELECTRON SPECTROSCOPY (XPS) [J].

WURZBACH, JA ;

GRUNTHANER, FJ ;

MASERJIAN, J .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 20 (04) :962-965

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