SIMULATION AND MEASUREMENT OF C/V DOPING PROFILES IN MULTILAYER STRUCTURES

[1] ELECTROCHEMICAL CAPACITANCE CHARACTERIZATION OF N-TYPE GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED ELECTROCHEMISTRY, 1974, 4 (02) : 135 - &

[2] CASEY HC, 1978, HETEROSTRUCTURE LA A, P191

[3] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667

[4] Dingle R, 1975, FESTKORPERPROBLEME, V15, P21

[5] HIYAMIZU S, 1981, JPN J APPL PHYS, V20, P378

[6] INFLUENCE OF DEBYE LENGTH ON C-V MEASUREMENTS OF DOPING PROFILES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) : 965 - &

[7] MEASUREMENT OF ISOTYPE HETEROJUNCTION BARRIERS BY C-V PROFILING [J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 295 - 297

[8] SPONTANEOUS AND STIMULATED EMISSION IN JUNCTION LASERS .I. BANDS WITH PARABOLIC STATE DENSITIES [J]. ZEITSCHRIFT FUR PHYSIK, 1967, 207 (04): : 322 - &

[9] VOROBKALO FM, 1975, SOV PHYS SEMICOND+, V9, P656

[10] C-V PROFILING OF GAAS FET FILMS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (11) : 1317 - 1324

[1] ELECTROCHEMICAL CAPACITANCE CHARACTERIZATION OF N-TYPE GALLIUM-ARSENIDE [J]. JOURNAL OF APPLIED ELECTROCHEMISTRY, 1974, 4 (02) : 135 - &

[2] CASEY HC, 1978, HETEROSTRUCTURE LA A, P191

[3] ELECTRON MOBILITIES IN MODULATION-DOPED SEMICONDUCTOR HETEROJUNCTION SUPER-LATTICES [J]. APPLIED PHYSICS LETTERS, 1978, 33 (07) : 665 - 667

[4] Dingle R, 1975, FESTKORPERPROBLEME, V15, P21

[5] HIYAMIZU S, 1981, JPN J APPL PHYS, V20, P378

[6] INFLUENCE OF DEBYE LENGTH ON C-V MEASUREMENTS OF DOPING PROFILES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1971, ED18 (10) : 965 - &

[7] MEASUREMENT OF ISOTYPE HETEROJUNCTION BARRIERS BY C-V PROFILING [J]. APPLIED PHYSICS LETTERS, 1980, 36 (04) : 295 - 297

[8] SPONTANEOUS AND STIMULATED EMISSION IN JUNCTION LASERS .I. BANDS WITH PARABOLIC STATE DENSITIES [J]. ZEITSCHRIFT FUR PHYSIK, 1967, 207 (04): : 322 - &

[9] VOROBKALO FM, 1975, SOV PHYS SEMICOND+, V9, P656

[10] C-V PROFILING OF GAAS FET FILMS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (11) : 1317 - 1324