THERMIONIC-FIELD EMISSION FROM INTERFACE STATES AT GRAIN-BOUNDARIES IN SILICON

被引：44

作者：

DEGROOT, AW

MCGONIGAL, GC

THOMSON, DJ

CARD, HC

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 02期

关键词：

D O I：

10.1063/1.333099

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：312 / 317

页数：6

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