DC AND MICROWAVE CHARACTERISTICS OF MODULATION DOPED GA0.47IN0.53AS/INP HFET

被引：2

作者：

SHAHAR, A

FEUER, MD

KOREN, U

MILLER, BI

机构：

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 11期

关键词：

D O I：

10.1049/el:19880474

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：702 / 703

页数：2

共 7 条

[1]

HUESCHEN M, 1984, 1984 IEDM, P348

[2] HIGH-QUALITY NARROW GAINAS/INP QUANTUM-WELLS GROWN BY ATMOSPHERIC ORGANOMETALLIC VAPOR-PHASE EPITAXY [J].

MILLER, BI ;

SCHUBERT, EF ;

KOREN, U ;

OURMAZD, A ;

DAYEM, AH ;

CAPIK, RJ .

APPLIED PHYSICS LETTERS, 1986, 49 (20) :1384-1386

[3]

RAULIN TY, 1987, APPL PHYS LETT, V50, P535

[4] THE DELTA-DOPED FIELD-EFFECT TRANSISTOR (DELTA-FET) [J].

SCHUBERT, EF ;

FISCHER, A ;

PLOOG, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (05) :625-632

[5]

SCHUBERT EF, 1985, JPN J APPL PHYS, V24, P608

[6] SELECTIVELY DOPED N+ INP/N- GAINAS HETEROSTRUCTURE PREPARED USING CHLORIDE TRANSPORT VAPOR-PHASE EPITAXY [J].

TAKIKAWA, M ;

KOMENO, J ;

OZEKI, M .

ELECTRONICS LETTERS, 1984, 20 (07) :306-307

[7] GRADED CHANNEL FETS - IMPROVED LINEARITY AND NOISE-FIGURE [J].

WILLIAMS, RE ;

SHAW, DW .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (06) :600-605

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