CMOS DEVICE ISOLATION USING THE SELECTIVE-ETCH-AND-REFILL-WITH-EPI (SEREPI) PROCESS

[1] BORLAND JO, 1985, SOLID STATE TECHNOL, V28, P141

[2] CONTROL OF LATERAL EPITAXIAL CHEMICAL VAPOR-DEPOSITION OF SILICON OVER INSULATORS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (02) : 519 - 523

[3] Cham K. M., 1983, International Electron Devices Meeting 1983. Technical Digest, P23

[4] A STUDY OF THE TRENCH SURFACE INVERSION PROBLEM IN THE TRENCH CMOS TECHNOLOGY [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (09) : 303 - 305

[5] STRUCTURAL EFFECTS ON A SUB-MICRON TRENCH PROCESS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (07) : 1705 - 1707

[6] CLARK R, COMMUNICATION

[7] Rung R. D., 1982, International Electron Devices Meeting. Technical Digest, P237

[8] A RETROGRADE P-WELL FOR HIGHER DENSITY CMOS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1115 - 1119

[9] A TRENCH-ISOLATED SUBMICROMETER CMOS TECHNOLOGY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (05) : 926 - 931

[1] BORLAND JO, 1985, SOLID STATE TECHNOL, V28, P141

[2] CONTROL OF LATERAL EPITAXIAL CHEMICAL VAPOR-DEPOSITION OF SILICON OVER INSULATORS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 55 (02) : 519 - 523

[3] Cham K. M., 1983, International Electron Devices Meeting 1983. Technical Digest, P23

[4] A STUDY OF THE TRENCH SURFACE INVERSION PROBLEM IN THE TRENCH CMOS TECHNOLOGY [J]. IEEE ELECTRON DEVICE LETTERS, 1983, 4 (09) : 303 - 305

[5] STRUCTURAL EFFECTS ON A SUB-MICRON TRENCH PROCESS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (07) : 1705 - 1707

[6] CLARK R, COMMUNICATION

[7] Rung R. D., 1982, International Electron Devices Meeting. Technical Digest, P237

[8] A RETROGRADE P-WELL FOR HIGHER DENSITY CMOS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (10) : 1115 - 1119

[9] A TRENCH-ISOLATED SUBMICROMETER CMOS TECHNOLOGY [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1985, 32 (05) : 926 - 931