LATTICE-DYNAMICS AND RAMAN RESPONSE OF (113) GAAS/ALAS SUPERLATTICES

被引:25
作者
CASTRILLO, P [1 ]
COLOMBO, L [1 ]
ARMELLES, G [1 ]
机构
[1] CSIC,CTR NACL MICROELECTR,E-28006 MADRID,SPAIN
来源
PHYSICAL REVIEW B | 1994年 / 49卷 / 15期
关键词
D O I
10.1103/PhysRevB.49.10362
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We present a supercell model calculation of the vibrational properties and Raman response of (113)-oriented GaAs/AlAs superlattices. Phonon-dispersion relations are calculated both along the growth axis and in the normal planes. The angular dispersion of the zone-center optical phonons is calculated as well, and some unusual features are discussed. We also calculate the Raman response in the backscattering geometry: to this aim, the bond polarizability model has been suitably extended to the case of arbitrarily oriented superlattices. The effects of the interface cationic diffusion on the Raman spectra are discussed. A comparison with experimental data is finally presented and discussed.
引用
收藏
页码:10362 / 10372
页数:11
相关论文
共 27 条
[1]   STUDY OF ZONE-FOLDING EFFECTS ON PHONONS IN ALTERNATING MONOLAYERS OF GAAS-ALAS [J].
BARKER, AS ;
MERZ, JL ;
GOSSARD, AC .
PHYSICAL REVIEW B, 1978, 17 (08) :3181-3196
[2]   VIBRATIONAL PROPERTIES AND INFRARED-SPECTRA OF ALXGA1-XAS SYSTEMS .1. AVERAGE-T-MATRIX APPROXIMATION VERSUS SUPERCELL CALCULATION FOR HOMOGENEOUS ALLOYS [J].
BERNASCONI, M ;
COLOMBO, L ;
MIGLIO, L ;
BENEDEK, G .
PHYSICAL REVIEW B, 1991, 43 (18) :14447-14456
[3]   VIBRATIONAL PROPERTIES AND INFRARED-SPECTRA OF ALXGA1-XAS SYSTEMS .2. ORDER AND DISORDER FEATURES IN SUPERLATTICE CONFIGURATION [J].
BERNASCONI, M ;
COLOMBO, L ;
MIGLIO, L .
PHYSICAL REVIEW B, 1991, 43 (18) :14457-14464
[4]   ATOMIC LAYER MOLECULAR-BEAM EPITAXY (ALMBE) OF III-V COMPOUNDS - GROWTH MODES AND APPLICATIONS [J].
BRIONES, F ;
GONZALEZ, L ;
RUIZ, A .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1989, 49 (06) :729-737
[5]  
CARDONA M, 1989, LIGHT SCATTERING SOL, V2, P67
[6]   RAMAN RESPONSE OF GAAS/ALAS SUPERLATTICES WITH ALXGA1-XAS INTRALAYERS [J].
COLOMBO, L ;
MOLTENI, C ;
MIGLIO, L .
SUPERLATTICES AND MICROSTRUCTURES, 1992, 12 (04) :523-525
[7]  
DOMINGUEZ PS, COMMUNICATION
[8]   ABINITIO CALCULATION OF PHONON DISPERSIONS IN SEMICONDUCTORS [J].
GIANNOZZI, P ;
DE GIRONCOLI, S ;
PAVONE, P ;
BARONI, S .
PHYSICAL REVIEW B, 1991, 43 (09) :7231-7242
[9]   RAMAN-SCATTERING CHARACTERIZATION OF INTERFACE BROADENING IN GAAS/ALAS SHORT-PERIOD SUPERLATTICES GROWN BY MOLECULAR-BEAM EPITAXY [J].
JUSSERAND, B ;
ALEXANDRE, F ;
PAQUET, D ;
LEROUX, G .
APPLIED PHYSICS LETTERS, 1985, 47 (03) :301-303
[10]  
JUSSERAND B, 1989, LIGHT SCATTERING SOL, V5