OXIDATION AND INTERFACE STATES IN A-SI-H

被引：35

作者：

STREET, RA

KNIGHTS, JC

机构：

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1981年 / 43卷 / 06期

关键词：

D O I：

10.1080/01418638108222576

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1091 / 1098

页数：8

共 18 条

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[7]

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[8]

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[10] ELECTRONIC AND STRUCTURAL-PROPERTIES OF PLASMA-DEPOSITED A-SI-O-H - STORY OF O2 [J].

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