DETERMINATION OF FREE CHARGE CARRIER DISTRIBUTION AND MICRO-SEGREGATION OF DOPANTS IN N-TYPE GAAS

被引：9

作者：

CARLSON, DJ

WITT, AF

机构：

[1] MIT, Cambridge, MA, USA, MIT, Cambridge, MA, USA

来源：

JOURNAL OF CRYSTAL GROWTH | 1988年 / 91卷 / 1-2期

关键词：

SEMICONDUCTOR DEVICE MANUFACTURE;

D O I：

10.1016/0022-0248(88)90392-2

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

An experimental approach to the rapid determination of the micro-distribution of free charge carriers in n-type GaAs is reported. Computer based video processing techniques are used to determine the IR absorption characteristics of wafers with a spatial resolution of less than 10 mu m and to convert these data after calibration into charge carrier density. The application of this technique to microsegregation analysis of Te-doped GaAs is demonstrated.

引用

页码：239 / 243

页数：5

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