NEGATIVE-U PROPERTY OF THE DX CENTER IN ALXGA1-XAS-SI - COMMENT

被引：6

作者：

DMOCHOWSKI, JE

机构：

[1] Imperial College of Science, Technology and Medicine, Blackett Laboratory, London SW7 2BZ, Prince Consort Road

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.42.9709

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A contradiction between conclusions derived by M. F. Li et al. [Phys. Rev. B 40, 1430 (1989)] and J. E. Dmochowski and L. Dobaczewski [Semicond. Sci. Technol. 4, 579 (1989)] on the applicability of a simple single-level model of the DX center with negative-U properties to the Hall experimental data for n-type AlxGa1-xAs is discussed. The suggestion of Li et al., that more than one type of impurity center is present in the AlxGa1-xAs alloy, is likely to be correct, but it is shown that they may all possess a negative-U DX-type level. © 1990 The American Physical Society.

引用

页码：9709 / 9710

页数：2

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