NEGATIVE-U PROPERTY OF THE DX CENTER IN ALXGA1-XAS-SI

被引：24

作者：

LI, MF

JIA, YB

YU, PY

ZHOU, J

GAO, JL

机构：

[1] UNIV SCI & TECHNOL CHINA,ACAD SINICA,GRAD SCH,BEIJING,PEOPLES R CHINA

[2] UNIV CALIF BERKELEY,DEPT PHYS,BERKELEY,CA 94720

[3] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & CHEM SCI,BERKELEY,CA 94720

[4] CHINESE ACAD SCI,INST SEMICOND,BEIJING,PEOPLES R CHINA

来源：

PHYSICAL REVIEW B | 1989年 / 40卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.40.1430

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1430 / 1433

页数：4

共 23 条

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[2] THEORY OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF DX CENTERS IN GAAS AND ALXGA1-XAS ALLOYS
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[3] CHADI DJ, UNPUB
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[5] ELECTRON INTERFERENCE EFFECTS IN QUANTUM-WELLS - OBSERVATION OF BOUND AND RESONANT STATES
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[6] Henning J. C. M., 1989, Materials Science Forum, V38-41, P1085, DOI 10.4028/www.scientific.net/MSF.38-41.1085
[7] SI AND SN DOPING IN ALXGA1-XAS GROWN BY MBE
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OKAMOTO, H
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (08): : L476 - L478
[8] ELECTRICAL-PROPERTIES OF SI-DOPED ALXGA1-XAS LAYERS GROWN BY MBE
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SAITO, J
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[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (11): : L675 - L676
[9] Khachaturyan K., 1989, Materials Science Forum, V38-41, P1067, DOI 10.4028/www.scientific.net/MSF.38-41.1067
[10] INFLUENCE OF ALLOY COMPOSITION, SUBSTRATE-TEMPERATURE, AND DOPING CONCENTRATION ON ELECTRICAL-PROPERTIES OF SI-DOPED N-ALXGA1-XAS GROWN BY MOLECULAR-BEAM EPITAXY
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PLOOG, K
WUNSTEL, K
ZHOU, BL
[J]. JOURNAL OF ELECTRONIC MATERIALS, 1984, 13 (02) : 281 - 308

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