NOISE AND REPRODUCIBLE STRUCTURE IN A GAAS/ALXGA1-XAS ONE-DIMENSIONAL CHANNEL

被引：62

作者：

COBDEN, DH

PATEL, NK

PEPPER, M

RITCHIE, DA

FROST, JEF

JONES, GAC

机构：

[1] Cavendish Laboratory, University of Cambridge, Cambridge CB3 0HE, Madingley Road

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.44.1938

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have analyzed the resistance noise, in the time domain, in a GaAs/Al(x)Ga(1-x)As split-gate device showing quantized resistance plateaus. The noise consists mainly of random telegraph signals which can be related to individual slow-electron-trapping defects within the nonconducting regions of the device. These defects are found to influence the conductance mainly by shifting the average electrical potential of the ballistic constriction (channel) relative to the Fermi level. As the gate voltage is varied the defects change their mean occupancy, and this is shown to give rise to some of the reproducible nonquantized structure in the static characteristics of a device. There is clear evidence for interaction between defects.

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页码：1938 / 1941

页数：4

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