TRANSPORT PROPERTIES OF AN INHOMOGENEOUS MODEL OF AMORPHOUS SILICON AND GERMANIUM FILMS

被引：9

作者：

THOMAS, P ^{[1
]}

BARNA, A ^{[1
]}

BARNA, PB ^{[1
]}

RADNOCZI, G ^{[1
]}

机构：

[1] HUNGARIAN ACAD SCI,RES INST TECH PHYS,BUDAPEST,HUNGARY

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1975年 / 30卷 / 02期

关键词：

D O I：

10.1002/pssa.2210300225

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：637 / 646

页数：10

共 35 条

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[14]

Fritzsche H., 1974, AMORPHOUS LIQUID SEM, P221

[15]

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[16] ELECTRICAL AND STRUCTURAL-PROPERTIES OF AMORPHOUS GERMANIUM [J].

HAUSER, JJ ;

STAUDINGER, A .

PHYSICAL REVIEW B, 1973, 8 (02) :607-615

[17]

JONSCHER AK, 1973, 5 P INT C AM LIQ SEM, V2, P1179

[18] PHOTOCONDUCTIVITY STUDIES OF DEFECTS IN SILICON - DIVACANCY-ASSOCIATED ENERGY LEVELS [J].

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CORELLI, JC .

PHYSICAL REVIEW, 1968, 173 (03) :734-+

[19]

KNOTEK ML, 1974, 20 AIP C P, P297

[20]

LEWIS AJ, 1974, 20 AIP C P YORKT HEI, P27

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