THE EFFECT OF GATE METAL AND SIO2 THICKNESS ON THE GENERATION OF DONOR STATES AT THE SI-SIO2 INTERFACE

[1] THRESHOLD ENERGIES FOR ELECTRON-HOLE PAIR PRODUCTION BY IMPACT IONIZATION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1972, 5 (06): : 2267 - &

[2] ASLAM M, UNPUB

[3] Chang C., 1983, International Electron Devices Meeting 1983. Technical Digest, P194

[4] ELECTROLUMINESCENCE STUDIES IN SILICON DIOXIDE FILMS CONTAINING TINY SILICON ISLANDS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) : 401 - 416

[5] IMPACT IONIZATION MODEL FOR DIELECTRIC INSTABILITY AND BREAKDOWN [J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 685 - 687

[6] 2 COMPONENTS OF TUNNELING CURRENT IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1983, 43 (01) : 106 - 108

[7] THE EFFECTS OF WATER ON OXIDE AND INTERFACE TRAPPED CHARGE GENERATION IN THERMAL SIO2-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5665 - 5682

[8] MONTE-CARLO SOLUTION TO THE PROBLEM OF HIGH-FIELD ELECTRON HEATING IN SIO2 [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (18) : 1755 - 1758

[9] THE IMPORTANCE OF THE ANODE FIELD IN CONTROLLING THE GENERATION RATE OF THE DONOR STATES AT THE SI-SIO2 INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) : 575 - 577

[10] FISCHETTI MV, UNPUB J APPL PHYS

[1] THRESHOLD ENERGIES FOR ELECTRON-HOLE PAIR PRODUCTION BY IMPACT IONIZATION IN SEMICONDUCTORS [J]. PHYSICAL REVIEW B, 1972, 5 (06): : 2267 - &

[2] ASLAM M, UNPUB

[3] Chang C., 1983, International Electron Devices Meeting 1983. Technical Digest, P194

[4] ELECTROLUMINESCENCE STUDIES IN SILICON DIOXIDE FILMS CONTAINING TINY SILICON ISLANDS [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) : 401 - 416

[5] IMPACT IONIZATION MODEL FOR DIELECTRIC INSTABILITY AND BREAKDOWN [J]. APPLIED PHYSICS LETTERS, 1974, 25 (12) : 685 - 687

[6] 2 COMPONENTS OF TUNNELING CURRENT IN METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J]. APPLIED PHYSICS LETTERS, 1983, 43 (01) : 106 - 108

[7] THE EFFECTS OF WATER ON OXIDE AND INTERFACE TRAPPED CHARGE GENERATION IN THERMAL SIO2-FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5665 - 5682

[8] MONTE-CARLO SOLUTION TO THE PROBLEM OF HIGH-FIELD ELECTRON HEATING IN SIO2 [J]. PHYSICAL REVIEW LETTERS, 1984, 53 (18) : 1755 - 1758

[9] THE IMPORTANCE OF THE ANODE FIELD IN CONTROLLING THE GENERATION RATE OF THE DONOR STATES AT THE SI-SIO2 INTERFACE [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) : 575 - 577

[10] FISCHETTI MV, UNPUB J APPL PHYS