ROOM-TEMPERATURE OPERATION OF 3-TERMINAL QUANTUM-CONFINED FIELD-EFFECT LIGHT EMITTERS

被引：10

作者：

KAN, Y

OKUDA, M

YAMANISHI, M

OHNISHI, T

MUKAIYAMA, K

SUEMUNE, I

机构：

[1] Department of Physical Electronics, Hiroshima University, Higashihiroshima 724, Shitami, Saijo-cho

来源：

APPLIED PHYSICS LETTERS | 1990年 / 56卷 / 21期

关键词：

D O I：

10.1063/1.102992

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The field control of the luminescent characteristics is investigated with three-terminal field-effect light-emitting devices with superlattice buffer layers, showing a high-speed switching (∼0.8 ns) of emission intensity, free from lifetime limitation at room temperature and a high quantum yield of the emission intensity, i.e., an external efficiency ηex≥1%. It is demonstrated that a combination of the field control of radiative lifetime with carrier leakage results in a high-speed modulation of luminescence intensity under a fixed carrier population in the active layer, unchanged with and without electric fields.

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页码：2059 / 2061

页数：3

相关论文

共 11 条

[1] EFFECTS OF PRELAYERS ON MINORITY-CARRIER LIFETIME IN GAAS/ALGAAS DOUBLE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY [J].

DAWSON, P ;

WOODBRIDGE, K .

APPLIED PHYSICS LETTERS, 1984, 45 (11) :1227-1229

[2] IMPROVED RECOMBINATION LIFETIME OF PHOTOEXCITED CARRIERS IN GAAS SINGLE QUANTUM-WELL HETEROSTRUCTURES CONFINED BY GAAS/ALAS SHORT-PERIOD SUPERLATTICES [J].

FUJIWARA, K ;

NAKAMURA, A ;

TOKUDA, Y ;

NAKAYAMA, T ;

HIRAI, M .

APPLIED PHYSICS LETTERS, 1986, 49 (18) :1193-1195

[3] REDUCTION IN INTERFACIAL RECOMBINATION VELOCITY BY SUPERLATTICE BUFFER LAYERS IN GAAS/ALGAAS QUANTUM WELL STRUCTURES [J].

IWATA, H ;

YOKOYAMA, H ;

SUGIMOTO, M ;

HAMAO, N ;

ONABE, K .

APPLIED PHYSICS LETTERS, 1989, 54 (24) :2427-2428

[4] QUANTUM-CONFINED FIELD-EFFECT LIGHT EMITTERS WITH HIGH-SPEED SWITCHING CAPABILITY [J].

KAN, Y ;

YAMANISHI, M ;

OKUDA, M ;

MUKAIYAMA, K ;

OHNISHI, T ;

KAWAMOTO, M ;

SUEMUNE, I .

APPLIED PHYSICS LETTERS, 1989, 55 (12) :1149-1151

[5]

KAN Y, 1986, IEEE J QUANTUM ELECT, V22, P1837

[6]

KAN Y, 1989, 21ST C SOL STAT DEV, P553

[7]

MUKAIYAMA K, 1990, IN PRESS JPN J APPL, V29

[8] DYNAMIC SWITCHING CHARACTERISTICS OF PHOTOLUMINESCENCE BY AN ELECTRIC-FIELD IN ALGAAS QUANTUM-WELL STRUCTURES [J].

OGURA, I ;

YAMANISHI, M ;

KAN, Y ;

SUEMUNE, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (08) :L1313-L1316

[9] TRANSIENT-RESPONSE OF PHOTOLUMINESCENCE FOR ELECTRIC-FIELD IN A GAAS/AL0.7GA0.3AS SINGLE QUANTUM WELL - EVIDENCE FOR FIELD-INDUCED INCREASE IN CARRIER LIFE TIME [J].

YAMANISHI, M ;

USAMI, Y ;

KAN, Y ;

SUEMUNE, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1985, 24 (08) :L586-L588

[10] SIZE EFFECT MODULATION-LIGHT SOURCES - POSSIBILITY OF LED MODE-OPERATION AT ROOM-TEMPERATURE [J].

YAMANISHI, M ;

YAMAMOTO, H ;

SUEMUNE, I .

SUPERLATTICES AND MICROSTRUCTURES, 1985, 1 (04) :335-337