AMORPHOUS-CRYSTALLINE SILICON ISOTYPE HETEROJUNCTION - ELECTROSTATIC POTENTIAL DISTRIBUTION AND C(V) CURVES

被引:8
作者
RUBINELLI, F
ALBORNOZ, S
BUITRAGO, R
机构
[1] Univ Nacional del Litoral, Consejo, Nacional de Investigaciones, Cientificas y Tecnicas, Santa Fe,, Univ Nacional del Litoral, Consejo Nacional de Investigaciones Cientificas y Tecnicas, Santa Fe, Ar
关键词
CRYSTALS - Electron States - SEMICONDUCTING SILICON - Amorphous;
D O I
10.1016/0038-1101(85)90059-0
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
An amorphous-crystalline silicon isotype heterojunction is studied. The electrostatic potential profile, the built-in and interface potentials, space charge region widths and C-V curves were calculated using different doping levels. The effect of small changes in the electron affinity, band gap and density of states in the gap of a-Si:H were calculated. The effect of a localized charge at the interface was determined. The results were applied to a multijunction of the ppn or nnp type.
引用
收藏
页码:741 / 750
页数:10
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