EFFECTS OF VACUUM ANNEALING ON THE ELECTRONIC-PROPERTIES OF CLEAVED GAAS

被引：37

作者：

PROIX, F

AKREMI, A

ZHONG, ZT

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1983年 / 16卷 / 28期

关键词：

D O I：

10.1088/0022-3719/16/28/013

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：5449 / 5463

页数：15

共 33 条

[11]

CLEMENS HJ, 1977, 7TH P INT VAC C 3RD, P635

[12] COMPOSITION AND STRUCTURE OF DIFFERENTLY PREPARED GAAS(100) SURFACES STUDIED BY LEED AND AES [J].

DRATHEN, P ;

RANKE, W ;

JACOBI, K .

SURFACE SCIENCE, 1978, 77 (01) :L162-L166

[13] ETUDE THERMODYNAMIQUE DES COMPOSES-III-V ET COMPOSES-II-VI PAR SPECTROMETRIE DE MASSE [J].

DROWART, J ;

GOLDFINGER, P .

JOURNAL DE CHIMIE PHYSIQUE ET DE PHYSICO-CHIMIE BIOLOGIQUE, 1958, 55 (10) :721-732

[14] EVAPORATION OF GAAS UNDER EQUILIBRIUM AND NONEQUILIBRIUM CONDITIONS USING A MODULATED BEAM TECHNIQUE [J].

FOXON, CT ;

HARVEY, JA ;

JOYCE, BA .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1973, 34 (10) :1693-&

[15] LANGMUIR EVAPORATION FROM (100), (111A), AND (111B) FACES OF GAAS [J].

GOLDSTEIN, B ;

SZOSTAK, DJ ;

BAN, VS .

SURFACE SCIENCE, 1976, 57 (02) :733-740

[16] INTRINSIC AND DEFECT-INDUCED SURFACE-STATES OF CLEAVED GAAS(110) [J].

GUICHAR, GM ;

SEBENNE, CA ;

GARRY, GA .

PHYSICAL REVIEW LETTERS, 1976, 37 (17) :1158-1161

[17] BEHAVIOR OF INSB SURFACES DURING HEAT TREATMENT [J].

HANEMAN, D .

JOURNAL OF APPLIED PHYSICS, 1960, 31 (01) :217-218

[18]

HANEMAN D, 1964, 7TH P INT C SEM PAR, P1141

[19] IDEAL (111), (110) AND (100) SURFACES OF SI, GE AND GAAS - COMPARISON OF THEIR ELECTRONIC-STRUCTURE [J].

IVANOV, I ;

MAZUR, A ;

POLLMANN, J .

SURFACE SCIENCE, 1980, 92 (2-3) :365-384

[20] PHOTOEMISSION FROM NE, AR, KR AND XE LAYERS ON NI(110) AND GA FILMS [J].

JACOBI, K ;

HSU, YP ;

ROTERMUND, HH .

SURFACE SCIENCE, 1982, 114 (2-3) :683-691

← 1 2 3 4 →