MONTE-CARLO SIMULATION OF ELECTRON-TRANSPORT IN GAAS/GA1-XALXAS QUANTUM-WELLS USING DIFFERENT PHONON MODELS

被引：3

作者：

CHAMBERLAIN, MP

HOARE, D

KELSALL, RW

ABRAM, RA

机构：

[1] Sch. of Eng. and Appl. Sci., Durham Univ.

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 3B期

关键词：

D O I：

10.1088/0268-1242/7/3B/012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We calculate electron-LO phonon intersubband and intrasubband scattering rates in a 70 angstrom GaAs/Ga0.7Al0.3As quantum well considering the phonons to be described by the hydrodynamic model, the slab mode model and the bulk phonon approximation. These rates for the different phonon models are used in a Monte Carlo simulation of the electron drift velocity in the quantum well under the influence of an electric field.

引用

页码：B45 / B48

页数：4

共 20 条

[1] RESONANCE EFFECT IN INTERSUBBAND TRANSITIONS OF SINGLE QUANTUM-WELLS [J].