FORMATION OF STOICHIOMETRIC SIGE OXIDE BY ELECTRON-CYCLOTRON RESONANCE PLASMA

被引：30

作者：

LI, PW ^{[1
]}

LIOU, HK ^{[1
]}

YANG, ES ^{[1
]}

IYER, SS ^{[1
]}

SMITH, TP ^{[1
]}

LU, Z ^{[1
]}

机构：

[1] IBM CORP,DIV RES,TJ WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 26期

关键词：

D O I：

10.1063/1.106714

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Electron cyclotron resonance (ECR) plasma oxidation of SiGe alloys was investigated at temperatures from room temperature to 500-degrees-C. Both Si and Ge are shown to be fully oxidized, forming SiO2 and GeO2. Auger depth profiling reveals that there is no Ge-rich SiGe layer after oxidation. With increasing temperature up to 500-degrees-C, the oxide is stoichiometric and it does not lose its GeO2 component. Oxidation has also been carried out at both positive and negative sample bias in order to identify the role of ions, electrons, and neutrals. From biasing experiments negative oxygen ions and atomic neutrals appear to be the major reaction species.

引用

页码：3265 / 3267

页数：3

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