STRUCTURES AND ELECTRICAL-PROPERTIES OF BARIUM STRONTIUM-TITANATE THIN-FILMS GROWN BY MULTI-ION-BEAM REACTIVE SPUTTERING TECHNIQUE

被引:98
作者
PENG, CJ
KRUPANIDHI, SB
机构
[1] IND TECHNOL RES INST,MAT RES LABS,HSINCHU 31015,TAIWAN
[2] IND TECHNOL RES INST,DEPT ENGN SCI & MECH,HSINCHU,TAIWAN
关键词
D O I
10.1557/JMR.1995.0708
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The structure and electrical properties of multi-ion beam reactive sputter (MIBERS) deposited barium strontium titanate (BST) films were characterized in terms of Ba/Sr ratio, substrate temperature, annealing temperature and time, film thickness, doping concentration, and secondary low-energy oxygen ion bombardment. Films deposited onto unheated substrates, followed by annealing at 700 degrees C showed lower dielectric constant (<200), compared to a dielectric constant of about 560 for those deposited at elevated temperatures, probably due to reduced voids. Two types of microstructures (type I and type II) were observed depending on the incipient phase of the as-grown films, which also led to two types of time domain dielectric response, Curie-von Schweidler and Debye type, respectively. The current-voltage (I-V) characteristics of type II films doped with high donor concentration showed a bulk space-charge-limited conduction (SCLC) with discrete shallow traps embedded in a trap-distributed background at high electric fields. The I-V characteristics of bombarded films deposited at higher substrate temperatures showed promising results of lower leakage currents and trap densities.
引用
收藏
页码:708 / 726
页数:19
相关论文
共 70 条
[11]   COMPOSITION STRUCTURE PROPERTY RELATIONS OF MULTIION-BEAM REACTIVE SPUTTERED LEAD LANTHANUM TITANATE THIN-FILMS .1. COMPOSITION AND STRUCTURE-ANALYSIS [J].
FOX, GR ;
KRUPANIDHI, SB ;
MORE, KL ;
ALLARD, LF .
JOURNAL OF MATERIALS RESEARCH, 1992, 7 (11) :3039-3055
[12]  
FOX GR, 1993, J APPL PHYS, V74, P1049
[13]   EINE BESTIMMUNG DER EFFEKTIVEN ZUSTANDSDICHTE DES BANDES FUR UBERSCHUSSIGE DEFEKTELEKTRONEN IN ANTHRAZEN [J].
HELFRICH, W ;
MARK, P .
ZEITSCHRIFT FUR PHYSIK, 1963, 171 (03) :527-&
[14]  
Hench L. L., 1990, PRINCIPLES ELECTRONI, P190
[15]   LIFETIME OF THIN OXIDE AND OXIDE-NITRIDE-OXIDE DIELECTRICS WITHIN TRENCH CAPACITORS FOR DRAMS [J].
HIERGEIST, P ;
SPITZER, A ;
ROHL, S .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (05) :913-919
[16]   THE TEMPERATURE-DEPENDENCE OF RELAXATION PROCESSES [J].
HILL, RM ;
DISSADO, LA .
JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (25) :5171-5193
[17]   PROPERTY MODIFICATION OF FERROELECTRIC PB(ZR,TI)O3 THIN-FILMS BY LOW-ENERGY OXYGEN ION-BOMBARDMENT DURING FILM GROWTH [J].
HU, H ;
KRUPANIDHI, SB .
APPLIED PHYSICS LETTERS, 1992, 61 (10) :1246-1248
[18]  
HU H, 1993, THESIS PENNSYLVANIA
[19]   DIELECTRIC-PROPERTIES OF ELECTRON-BEAM EVAPORATED SAMARIUM OXIDE-FILMS [J].
JAYARAJ, MK ;
VALLABHAN, CPG .
THIN SOLID FILMS, 1991, 197 (1-2) :15-19
[20]  
Jonscher A K, 1983, DIELECTRIC RELAXATIO, P161