DISLOCATION ELIMINATION IN THM GROWTH OF GAAS

被引：13

作者：

YIP, VFS

WILCOX, WR

机构：

[1] UNION CARBIDE CORP,DEPT CRYSTAL PROD,SAN DIEGO,CA 92112

[2] CLARKSON COLL TECHNOL,DEPT CHEM ENGN,POTSDAM,NY 13676

来源：

JOURNAL OF CRYSTAL GROWTH | 1976年 / 36卷 / 01期

关键词：

D O I：

10.1016/0022-0248(76)90210-4

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

收藏

页码：29 / 35

页数：7

相关论文

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