TUNNELLING IN QUANTUM-WELL STRUCTURES

被引：22

作者：

KELLY, MJ

机构：

来源：

ELECTRONICS LETTERS | 1984年 / 20卷 / 19期

关键词：

D O I：

10.1049/el:19840525

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：771 / 772

页数：2

相关论文

共 4 条

[1] RESONANT TUNNELING IN SEMICONDUCTOR DOUBLE BARRIERS
CHANG, LL
ESAKI, L
TSU, R
[J]. APPLIED PHYSICS LETTERS, 1974, 24 (12) : 593 - 595
[2] TUNNELLING THROUGH GAAS-ALXGA1-XAS-GAAS DOUBLE HETEROJUNCTIONS
DELAGEBEAUDEUF, D
DELESCLUSE, P
ETIENNE, P
MASSIES, J
LAVIRON, M
CHAPLART, J
LINH, T
[J]. ELECTRONICS LETTERS, 1982, 18 (02) : 85 - 87
[3] ELECTRON-TRANSPORT THROUGH THE MOCVD GROWN GAAS/ALGAAS/GAAS HETEROJUNCTION BARRIER
HASE, I
KAWAI, H
KANEKO, K
WATANABE, N
[J]. ELECTRONICS LETTERS, 1984, 20 (12) : 491 - 492
[4] TUNNELING IN A FINITE SUPERLATTICE
TSU, R
ESAKI, L
[J]. APPLIED PHYSICS LETTERS, 1973, 22 (11) : 562 - 564