13 MU-M BURIED HETEROJUNCTION LASER-DIODES UNDER HIGH ELECTRICAL STRESS - LEAKAGE CURRENTS AND AGING BEHAVIOR

被引：10

作者：

KUINDERSMA, PI

VALSTER, A

BAKS, W

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1985年 / 21卷 / 06期

关键词：

D O I：

10.1109/JQE.1985.1072702

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：726 / 736

页数：11

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