THIN ZIRCONIUM NITRIDE FILMS PREPARED BY PLASMA-ENHANCED CVD

被引：37

作者：

WENDEL, H

SUHR, H

机构：

[1] Department of Organic Chemistry, University of Tübingen, Tübingen, W-7400

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 1992年 / 54卷 / 04期

关键词：

D O I：

10.1007/BF00324208

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Thin films of zirconium nitride have been deposited at temperatures as low as 573 K by PECVD using tetrakis(diethylamido)zirconium, Zr[N(C2H5)2]4 as precursor. The influence of the various experimental parameters on film properties and deposition rates has been studied. Under most experimental conditions hard coatings of good adherence and low carbon contamination resulted.

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页码：389 / 392

页数：4

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