THE MIS PHYSICS OF THE NATIVE OXIDE-HG1-XCDX TE INTERFACE

被引：25

作者：

BECK, JD

KINCH, MA

ESPOSITO, EJ

CHAPMAN, RA

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 21卷 / 01期

关键词：

D O I：

10.1116/1.571706

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：172 / 177

页数：6

共 32 条

[1] TUNNEL CURRENT LIMITATIONS OF NARROW BANDGAP IR CHARGE COUPLED DEVICES [J].

ANDERSON, WW .

INFRARED PHYSICS, 1977, 17 (02) :147-164

[2]

ANDERSON WW, 1980, IRIS DET SP GRP M ME

[3] NUMERICAL TABULATION OF INTEGRALS OF FERMI FUNCTIONS USING K-]P-] DENSITY OF STATES [J].

BEBB, HB ;

RATLIFF, CR .

JOURNAL OF APPLIED PHYSICS, 1971, 42 (08) :3189-&

[4]

BECK JD, 1979, HGCDTE TRAPPING SU 1, V1

[5] INVERSION CHARGE REDISTRIBUTION MODEL OF HIGH-FREQUENCY MOS CAPACITANCE [J].

BERMAN, A ;

KERR, DR .

SOLID-STATE ELECTRONICS, 1974, 17 (07) :735-742

[6] TEST FOR LATERAL NONUNIFORMITIES IN MOS DEVICES USING ONLY CAPACITANCE CURVES [J].

BREWS, JR ;

LOPEZ, AD .

SOLID-STATE ELECTRONICS, 1973, 16 (11) :1267-1277

[7]

CATAGNUS PC, 1976, Patent No. 3977018

[8] DISTRIBUTION OF FLAT-BAND VOLTAGES IN LATERALLY NONUNIFORM MIS CAPACITORS AND APPLICATION TO A TEST FOR NONUNIFORMITIES [J].

CHANG, CC ;

JOHNSON, WC .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (12) :1368-1373

[9] MONOLITHIC HGCDTE CHARGE-TRANSFER DEVICE INFRARED IMAGING ARRAYS [J].

CHAPMAN, RA ;

BORRELLO, SR ;

SIMMONS, A ;

BECK, JD ;

LEWIS, AJ ;

KINCH, MA ;

HYNECEK, J ;

ROBERTS, CG .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (01) :134-145

[10]

CHAPMAN RA, 1980, MULTIPLEXED INTRINSI

← 1 2 3 4 →