RESISTIVITY, HALL-MOBILITY AND LEAKAGE CURRENT VARIATIONS IN UNDOPED SEMI-INSULATING GAAS CRYSTAL GROWN BY LEC METHOD

被引：15

作者：

MATSUMURA, T

EMORI, H

TERASHIMA, K

FUKUDA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 03期

关键词：

D O I：

10.1143/JJAP.22.L154

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

SEMICONDUCTING GALLIUM ARSENIDE

引用

页码：L154 / L156

页数：3

共 11 条

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[9] LEAKAGE CURRENT IL VARIATION CORRELATED WITH DISLOCATION DENSITY IN UNDOPED, SEMI-INSULATING LEC-GAAS [J].

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