COMPOSITIONAL ANALYSIS AND CAPACITANCE-VOLTAGE PROPERTIES OF TIO2 FILMS BY LOW-PRESSURE METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION

Thin films of TiO2 have been deposited on single crystals of (100) silicon by low pressure chemical vapor deposition of the organometallic compounds. Auger electron spectroscopy analysis was performed to investigate the composition of TiO2 layer and of the interface between the deposited layer and silicon substrate. The carbon in the TiO2 layer is due to contamination by Ti(C2H5O)4 decomposition and decreased with increasing deposition temperature and oxygen contents. The interface phase was not silicon oxide but silicon atoms. The sign and the magnitude of the flatband voltage depend on the deposition temperature, deposition thickness, and oxygen contents.