RESIDUAL-STRESS RELAXATION BEHAVIOR IN AL2O3-SIC NANOCOMPOSITE

被引:23
作者
FANG, JX [1 ]
CHAN, HM [1 ]
HARMER, MP [1 ]
机构
[1] LEHIGH UNIV, MAT RES CTR, BETHLEHEM, PA 18015 USA
来源
MATERIALS SCIENCE AND ENGINEERING A-STRUCTURAL MATERIALS PROPERTIES MICROSTRUCTURE AND PROCESSING | 1995年 / 195卷 / 1-2期
关键词
RESIDUAL STRESS RELAXATION; INDENTATION; ALUMINA; SILICON CARBIDE; NANOCOMPOSITE;
D O I
10.1016/0921-5093(94)06515-2
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
A novel indentation technique was used to investigate and compare the residual stress relaxation behavior in single-phase Al2O3 with that of a ''nanocomposite'' material consisting of Al2O3-5 vol.% 0.15 mu m SiC. Specifically, the degree of asymmetry in the radial crack pattern generated at small secondary ''satellite'' indents was used to probe the residual stress field introduced by a large primary indentation. In the ''as-dented'' case, where the secondary indentations were made immediately following the primary indentation, the crack pattern of the small indents was highly asymmetrical because of the influence of the residual stress field around the large indentation. In the ''annealed'' case, where the primary indentation was made prior to annealing, but the secondary indents were made after annealing at 1300 degrees C, the appearance of the radial cracking around the satellite indents was different for the two materials. In Al2O3, the crack configuration at the small indents was now symmetrical, whereas, in the nanocomposite, the crack morphology still exhibited significant asymmetry. These observations indicate that annealing completely relaxed the residual stresses in Al2O3, but only partially relieved the stresses in the nanocomposite.
引用
收藏
页码:163 / 167
页数:5
相关论文
共 17 条
[11]  
Niihara K., 1990, ADV STRUCTURAL INORG, P1990
[12]  
NIIHARA K, 1989, P INT M ADV MAT MAT, V4, P124
[13]  
Stearns L. C., 1992, Journal of the European Ceramic Society, V10, P473, DOI 10.1016/0955-2219(92)90022-6
[14]  
THOMPSON AM, 1994, UNPUB J AM CERAM SOC
[15]   EXPERIMENTAL-MEASUREMENT OF RESIDUAL-STRESS FIELD AROUND A SHARP INDENTATION IN CLASS [J].
ZENG, KY ;
ROWCLIFFE, D .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1994, 77 (02) :524-530
[16]   MECHANICAL-BEHAVIOR OF ALUMINA SILICON-CARBIDE NANOCOMPOSITES [J].
ZHAO, JH ;
STEARNS, LC ;
HARMER, MP ;
CHAN, HM ;
MILLER, GA ;
COOK, RF .
JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1993, 76 (02) :503-510
[17]   MEASUREMENT OF LOCAL STRESS IN LASER-RECRYSTALLIZED LATERAL EPITAXIAL SILICON FILMS OVER SILICON DIOXIDE USING RAMAN-SCATTERING [J].
ZORABEDIAN, P ;
ADAR, F .
APPLIED PHYSICS LETTERS, 1983, 43 (02) :177-179