MUTUAL TRANSFORMATION OF THERMAL AND ANODIC SI02 FILMS

[1] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03): : 749 - 783

[2] EDAGAWA H, 1963, JPN J APPL PHYS, V2, P765

[3] SILICON DIOXIDE AS DIELECTRIC IN SOLID ELECTROLYTE CAPACITORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (12) : 1192 - 1195

[4] JACCODINE RJ, TO BE PUBLISHED

[5] MORRISON JA, TO BE PUBLISHED

[6] DISLOCATIONS IN WEBS OF GERMANIUM + SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 409 - &

[7] OKEEFFE TW, 1965, J ELECTROCHEM SOC, V112, pC149

[8] STRUCTURAL EVALUATION OF SILICON OXIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) : 1013 - &

[9] ON STRUCTURE OF VITREOUS SIO2 .I. A NEW PENTAGONAL DODECAHEDRAL MODEL [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (02) : 209 - +

[10] STICKLER R, 1965, J ELECTROCHEM SOC, V112, pC148

[1] STABILIZATION OF SILICON SURFACES BY THERMALLY GROWN OXIDES [J]. BELL SYSTEM TECHNICAL JOURNAL, 1959, 38 (03): : 749 - 783

[2] EDAGAWA H, 1963, JPN J APPL PHYS, V2, P765

[3] SILICON DIOXIDE AS DIELECTRIC IN SOLID ELECTROLYTE CAPACITORS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (12) : 1192 - 1195

[4] JACCODINE RJ, TO BE PUBLISHED

[5] MORRISON JA, TO BE PUBLISHED

[6] DISLOCATIONS IN WEBS OF GERMANIUM + SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1964, 35 (02) : 409 - &

[7] OKEEFFE TW, 1965, J ELECTROCHEM SOC, V112, pC149

[8] STRUCTURAL EVALUATION OF SILICON OXIDE FILMS [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) : 1013 - &

[9] ON STRUCTURE OF VITREOUS SIO2 .I. A NEW PENTAGONAL DODECAHEDRAL MODEL [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1965, 26 (02) : 209 - +

[10] STICKLER R, 1965, J ELECTROCHEM SOC, V112, pC148