GENERATION OF INTERFACE STATES DUE TO EMISSION OF LEAKAGE ELECTRONS FROM SILICON SUBSTRATE INTO SILICON DIOXIDE

被引：6

作者：

HUANG, HCW ^{[1
]}

机构：

[1] IBM CORP,DIV SYST PROD,ESSEX JUNCTION,VT 05452

来源：

APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 10期

关键词：

D O I：

10.1063/1.89224

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：533 / 535

页数：3

共 16 条

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[7] ELECTROCHEMICAL CHARGING OF THERMAL SIO2 FILMS BY INJECTED ELECTRON CURRENTS [J].

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[8] AVALANCHE INJECTION OF ELECTRONS INTO INSULATING SIO2 USING MOS STRUCTURES [J].

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[9]

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[10] THRESHOLD INSTABILITY IN IGFETS DUE TO EMISSION OF LEAKAGE ELECTRONS FROM SILICON SUBSTRATE INTO SILICON DIOXIDE [J].

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