DIRECT OBSERVATION OF SATURATION BEHAVIOR OF SPONTANEOUS EMISSION IN SEMICONDUCTOR-LASERS

被引：25

作者：

NAKAMURA, M

AIKI, K

UMEDA, J

机构：

来源：

APPLIED PHYSICS LETTERS | 1978年 / 32卷 / 05期

关键词：

D O I：

10.1063/1.90036

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：322 / 323

页数：2

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[1] CHANNELED-SUBSTRATE PLANAR STRUCTURE (ALGA)AS INJECTION-LASERS
AIKI, K
NAKAMURA, M
KURODA, T
UMEDA, J
[J]. APPLIED PHYSICS LETTERS, 1977, 30 (12) : 649 - 651
[2] VARIATION OF SPONTANEOUS EMISSION WITH CURRENT IN GAAS HOMOSTRUCTURE AND DOUBLE-HETEROSTRUCTURE INJECTION LASERS
BROSSON, P
RIPPER, JE
PATEL, NB
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1973, QE 9 (02) : 273 - 280
[3] CONCENTRATION-DEPENDENT ABSORPTION AND SPONTANEOUS EMISSION OF HEAVILY DOPED GAAS
CASEY, HC
STERN, F
[J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (02) : 631 - 643
[4] GAIN SPECTRA IN GAAS DOUBLE-HETEROSTRUCTURE INJECTION LASERS
HAKKI, BW
PAOLI, TL
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (03) : 1299 - 1306
[5] GAAS DOUBLE HETEROSTRUCTURE LASING BEHAVIOR ALONG JUNCTION PLANE
HAKKI, BW
[J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (01) : 292 - 302
[6] QUANTUM-MECHANICAL RATE EQUATIONS FOR SEMICONDUCTOR LASERS
HAUG, H
[J]. PHYSICAL REVIEW, 1969, 184 (02): : 338 - +
[7] OBSERVATIONS OF SELF-FOCUSING IN STRIPE GEOMETRY SEMICONDUCTOR-LASERS AND DEVELOPMENT OF A COMPREHENSIVE MODEL OF THEIR OPERATION
KIRKBY, PA
GOODWIN, AR
THOMPSON, GHB
SELWAY, PR
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1977, 13 (08) : 705 - 719
[8] NAKAMURA M, UNPUBLISHED
[9] DECREASE IN SPONTANEOUS EMISSION AT ONSET OF LASING IN SEMICONDUCTORS
NICOLL, FH
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (07) : 2743 - &
[10] SATURATION OF JUNCTION VOLTAGE IN STRIPE-GEOMETRY (AIGA)AS DOUBLE-HETEROSTRUCTURE JUNCTION LASERS
PAOLI, TL
BARNES, PA
[J]. APPLIED PHYSICS LETTERS, 1976, 28 (12) : 714 - 716