DEGRADATION OF THE ELECTRICAL CHARACTERISTICS OF THE SI-SIO2 INTERFACE INDUCED BY ELECTRON INJECTION

被引：10

作者：

FALCONY, C

SALAS, FH

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 11期

关键词：

D O I：

10.1063/1.336767

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：3787 / 3791

页数：5

共 10 条

[1] SURFACE STATES AT STEAM-GROWN SILICON-SILICON DIOXIDE INTERFACES [J].

BERGLUND, CN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (10) :701-+

[2] HIGH-CURRENT INJECTION INTO SIO2 FROM SI RICH SIO2-FILMS AND EXPERIMENTAL APPLICATIONS [J].

DIMARIA, DJ ;

DONG, DW .

JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2722-2735

[3] PREPARATION AND SOME PROPERTIES OF CHEMICALLY VAPOR-DEPOSITED SI-RICH SIO2 AND SI3N4 FILMS [J].

DONG, D ;

IRENE, EA ;

YOUNG, DR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (05) :819-823

[4] A QUASI-STATIC TECHNIQUE FOR MOS C-V AND SURFACE STATE MEASUREMENTS [J].

KUHN, M .

SOLID-STATE ELECTRONICS, 1970, 13 (06) :873-+

[5]

LENAHAN PM, 1983, B AM PHYS SOC, V28, P247

[6]

LYON SA, 1984, PHYSICS VLSI, V122, P8

[7]

NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO

[8]

SZE SM, 1981, PHYSICS SEMICONDUCTO

[9] ELECTRON TRAPPING IN SIO2 AT 295 AND 77-DEGREES-K [J].

YOUNG, DR ;

IRENE, EA ;

DIMARIA, DJ ;

DEKEERSMAECKER, RF ;

MASSOUD, HZ .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (10) :6366-6372

[10] INTERFACE TRAPS GENERATED BY INTERNAL PHOTOEMISSION IN AL-SIO2-SI STRUCTURES [J].

ZEKERIYA, V ;

MA, TP .

APPLIED PHYSICS LETTERS, 1983, 43 (01) :95-97

← 1 →