INTERFACE TRAPS GENERATED BY INTERNAL PHOTOEMISSION IN AL-SIO2-SI STRUCTURES

被引：23

作者：

ZEKERIYA, V

MA, TP

机构：

来源：

APPLIED PHYSICS LETTERS | 1983年 / 43卷 / 01期

关键词：

D O I：

10.1063/1.94135

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：95 / 97

页数：3

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