ULTRATHIN GAAS/GAALAS LAYERS GROWN BY MOCVD AND THEIR STRUCTURAL CHARACTERIZATION

被引：12

作者：

WATANABE, N

MORI, Y

机构：

来源：

SURFACE SCIENCE | 1986年 / 174卷 / 1-3期

关键词：

D O I：

10.1016/0039-6028(86)90379-1

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：10 / 18

页数：9

共 24 条

[1] GROWTH OF (AL,GA)AS/GAAS HETEROSTRUCTURES FOR HEMT DEVICES [J].

ANDRE, JP ;

BRIERE, A ;

ROCCHI, M ;

RIET, M .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :445-449

[2] GROWTH AND CHARACTERIZATION OF ALGAAS/GAAS QUANTUM WELL LASERS [J].

BURNHAM, RD ;

STREIFER, W ;

PAOLI, TL ;

HOLONYAK, N .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :370-382

[3] A CRITICAL COMPARISON OF MOCVD AND MBE FOR HETEROJUNCTION DEVICES [J].

DAPKUS, PD .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :345-355

[4]

Dingle R, 1975, FESTKORPERPROBLEME, V15, P21

[5] GROWTH AND CHARACTERIZATION OF HIGH-QUALITY MOCVD ALGAAS/GAAS SINGLE QUANTUM WELLS [J].

DUPUIS, RD ;

MILLER, RC ;

PETROFF, PM .

JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) :398-405

[6]

FRIJLINK PM, 1982, J PHYS PARIS, V12, P185

[7] STRUCTURE OF GAAS-GA1-XALXAS SUPER-LATTICES GROWN BY METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION [J].

GRIFFITHS, RJM ;

CHEW, NG ;

CULLIS, AG ;

JOYCE, GC .

ELECTRONICS LETTERS, 1983, 19 (23) :988-990

[8]

HERSEE SD, 1982, J PHYSIQUE, V12, P193

[9] QUANTUM-WELL HETEROSTRUCTURE LASERS [J].

HOLONYAK, N ;

KOLBAS, RM ;

DUPUIS, RD ;

DAPKUS, PD .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1980, 16 (02) :170-186

[10]

HOLONYAK N, 1980, PHYS REV LETT, V45, P1073

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