PRECISE DETERMINATION OF LATTICE-PARAMETER AND THERMAL-EXPANSION COEFFICIENT OF SILICON BETWEEN 300-K AND 1500-K

被引：950

作者：

OKADA, Y

TOKUMARU, Y

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 02期

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D O I：

10.1063/1.333965

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：314 / 320

页数：7

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