THE PREPARATION OF TRANSPARENT ZONAL THIN-FILMS

被引：13

作者：

KONISHI, R

NODA, K

HARADA, H

SASAKURA, H

机构：

[1] Department of Electrical Engineering and Electronics, Faculty of Engineering, Tottori University, Tottori, 680, Koyama

来源：

JOURNAL OF CRYSTAL GROWTH | 1992年 / 117卷 / 1-4期

关键词：

Hall Mobility - Transparent Conductive Films - Transparent Electrodes - Zinc Oxide Aluminum Films;

D O I：

10.1016/0022-0248(92)90888-P

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Transparent conductive ZnO:Al films were prepared by the facing-target-type sputtering method. The films typically showed poor conductivity immediately after sputtering. However, at optimum conditions, they manifested their lowest resistivity of 4 x 10(-4) OMEGA cm after heat treatment at 400-degrees-C. The decrease in resistivity is mainly attributed to the improvement of the Hall mobility which in essence is not due to crystallinity improvement, but rather due to the decrease of excess oxygen atoms at the interstitial state or the grain boundaries. However, even without heat treatment we obtained a low resistivity of 5.3 x 10(-4) OMEGA cm under low oxidation sputtering condition at 0.1 Pa with oxygen to argon ratio of 1:4.

引用

页码：939 / 942

页数：4

共 5 条

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[5] FACING TARGETS TYPE OF SPUTTERING METHOD FOR DEPOSITION OF MAGNETIC METAL-FILMS AT LOW-TEMPERATURE AND HIGH-RATE
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