GROWTH-CONTROL OF INAS THIN-LAYERS ON GAAS SUBSTRATES WITH SEVERAL ORIENTATIONS

被引：5

作者：

LEE, JS

SHIMA, T

KUDO, K

TANAKA, K

NIKI, S

YAMADA, A

MAKITA, Y

机构：

[1] CHIBA UNIV,FAC ENGN,INAGE KU,CHIBA 263,JAPAN

[2] ELECTROTECH LAB,TSUKUBA,IBARAKI 305,JAPAN

来源：

APPLIED SURFACE SCIENCE | 1994年 / 75卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(94)90172-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Surface morphologies and photoluminescence (PL) spectra of the InAs/GaAs thin layer structures show the obvious dependence on substrate orientation. In addition, the structures grown on non-(100) substrates show a strong dependence on flux ratio, InAs layer thickness, and growth temperature. In particular, PL spectra and surface morphologies of (211)A specimens grown under several conditions show not only quantum well (QW) features but also three-dimensional microstructure ones. The results suggest that well defined layer-by-layer growth and three-dimensional growth can be controlled by changing the V/III flux ratio and growth temperature.

引用

收藏

页码：279 / 284

页数：6

相关论文

共 12 条

[1] GENERATION OF MACROSCOPIC STEPS ON PATTERNED (100) VICINAL GAAS-SURFACES [J].

COLAS, E ;

KAPON, E ;

SIMHONY, S ;

COX, HM ;

BHAT, R ;

KASH, K ;

LIN, PSD .

APPLIED PHYSICS LETTERS, 1989, 55 (09) :867-869

[2] STRAIN EFFECTS IN INGAAS/HAAS SUPERLATTICES [J].

DAHL, DA .

SOLID STATE COMMUNICATIONS, 1987, 61 (12) :825-826

[3] GAAS TETRAHEDRAL QUANTUM DOTS GROWN BY SELECTIVE AREA MOCVD [J].

FUKUI, T ;

ANDO, S .

SUPERLATTICES AND MICROSTRUCTURES, 1992, 12 (02) :141-144

[4] HIGH-QUALITY ULTRATHIN INAS/GAAS QUANTUM WELLS GROWN BY STANDARD AND LOW-TEMPERATURE MODULATED-FLUXES MOLECULAR-BEAM EPITAXY [J].

GERARD, JM ;

MARZIN, JY .

APPLIED PHYSICS LETTERS, 1988, 53 (07) :568-570

[5] SURFACE RECONSTRUCTION LIMITED MECHANISM OF MOLECULAR-BEAM EPITAXIAL-GROWTH OF ALGAAS ON (111)B FACE [J].

HAYAKAWA, T ;

MORISHIMA, M ;

CHEN, S .

APPLIED PHYSICS LETTERS, 1991, 59 (25) :3321-3323

[6] FABRICATION AND CHARACTERIZATION OF MBE GROWN INAS/GAAS STRAINED-LAYER SUPERLATTICES ON VARIOUSLY ORIENTED SUBSTRATES [J].

KUDO, K ;

LEE, JS ;

TANAKA, K ;

MAKITA, Y ;

YAMADA, A .

JOURNAL OF CRYSTAL GROWTH, 1991, 111 (1-4) :402-406

[7] OPTICAL-PROPERTIES OF (100)-ORIENTED AND (111)-ORIENTED GAINAS/GAAS STRAINED-LAYER SUPERLATTICES [J].

LAURICH, BK ;

ELCESS, K ;

FONSTAD, CG ;

BEERY, JG ;

MAILHIOT, C ;

SMITH, DL .

PHYSICAL REVIEW LETTERS, 1989, 62 (06) :649-652

[8] FORMATION OF INAS MICROSTRUCTURES ON VARIOUSLY ORIENTED GAAS SUBSTRATES [J].

LEE, J ;

KUDO, K ;

KUNIYOSHI, S ;

TANAKA, K ;

MAKITA, Y ;

YAMADA, A .

JOURNAL OF CRYSTAL GROWTH, 1991, 115 (1-4) :164-168

[9] ELECTRONIC BAND-STRUCTURE OF THE (GAAS)1/(INAS)1 (111) SUPERLATTICE [J].

MAGRI, R .

PHYSICAL REVIEW B, 1990, 41 (09) :6020-6031

[10] DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J].

MATTHEWS, JW ;

BLAKESLEE, AE .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :118-125