INTERFACIAL STRUCTURE OF ICB EPITAXIALLY DEPOSITED AL(110) BICRYSTAL FILMS ON SI(100) SUBSTRATES

被引：6

作者：

YAMADA, I

机构：

[1] Ion Beam Engineering Experimental Laboratory, Kyoto University, Sakyo, Kyoto

来源：

APPLIED SURFACE SCIENCE | 1989年 / 41-2卷

关键词：

D O I：

10.1016/0169-4332(89)90065-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Epitaxial Al bicrystal thin films have been formed on Si(100) substrates by ionized cluster beam (ICB) deposition at room temperature. The lattice mismatch at the grain boundary was observed by atomic resolution TEM. The results suggest that the epitaxial growth of Al(110) bicrystals occurs not only by epitaxial growth from the Si substrate surface but also at Al/Al grain boundaries. © 1989.

引用

页码：253 / 256

页数：4

共 6 条

[1] THE USE OF HETEROEPITAXY IN THE FABRICATION OF BICRYSTALS FOR THE STUDY OF GRAIN-BOUNDARY STRUCTURE [J].