SURFACE CHEMICAL CHARACTERIZATION BY AUGER SIGNAL DECOMPOSITION - SILICON-NITRIDE

被引:12
作者
MADDEN, HH
NELSON, GC
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APPLICATIONS OF SURFACE SCIENCE | 1982年 / 11-2卷 / JUL期
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10.1016/0378-5963(82)90089-7
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页码:408 / 419
页数:12
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共 29 条
[1]   METHOD FOR LEAST-SQUARES ANALYSIS OF GAMMA-RAY SCINTILLATION SPECTRA USING A BENT-CRYSTAL MONOCHROMATOR [J].
BROWN, JE ;
HATCH, EN .
NUCLEAR INSTRUMENTS & METHODS, 1967, 47 (02) :185-&
[2]   NITRIDATION OF SILICON (111) - AUGER AND LEED RESULTS [J].
DELORD, JF ;
SCHROTT, AG ;
FAIN, SC .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (01) :517-520
[3]   THEORY OF VALENCE-BAND AUGER LINE-SHAPES - IDEAL SI(111), (100), AND (110) [J].
FEIBELMAN, PJ ;
MCGUIRE, EJ ;
PANDEY, KC .
PHYSICAL REVIEW B, 1977, 15 (04) :2202-2216
[4]   VALENCE-BAND AUGER LINE-SHAPES FOR SI SURFACES - SIMPLIFIED THEORY AND CORRECTED NUMERICAL RESULTS [J].
FEIBELMAN, PJ ;
MCGUIRE, EJ .
PHYSICAL REVIEW B, 1978, 17 (02) :690-698
[5]   IONIZATION SPECTROMETER FOR ELEMENTAL ANALYSIS OF SURFACES [J].
GERLACH, RL ;
TIPPING, DW .
REVIEW OF SCIENTIFIC INSTRUMENTS, 1971, 42 (01) :151-&
[6]   SI(LVV) AUGER-SPECTRA OF AMORPHOUS SI-OXIDE, SI-NITRIDE, AND SI-OXINITRIDE [J].
HEZEL, R ;
LIESKE, N .
JOURNAL OF APPLIED PHYSICS, 1980, 51 (05) :2566-2568
[7]   TRANSITION DENSITY OF STATES FOR SI(100) FROM L1L23V AND L23VV AUGER-SPECTRA [J].
HOUSTON, JE ;
MOORE, G ;
LAGALLY, MG .
SOLID STATE COMMUNICATIONS, 1977, 21 (09) :879-882
[8]   VALENCE-BAND DENSITY OF STATES FOR SI AND SIO2 USING AUGER-ELECTRON SPECTROSCOPY [J].
HOUSTON, JE ;
LAGALLY, MG .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1976, 13 (01) :361-361
[9]  
HOUSTON JE, UNPUB
[10]   AUGER-ELECTRON SPECTROSCOPY AS A LOCAL PROBE OF ATOMIC CHARGE - SI L2,3VV [J].
JENNISON, DR .
PHYSICAL REVIEW LETTERS, 1978, 40 (12) :807-809