2ND-ORDER OPTICAL SUSCEPTIBILITY OF STRAINED GESI/SI SUPERLATTICES

[1] SECOND ORDER OPTICAL SUSCEPTIBILITY OF 3-5 COMPOUNDS [J]. PHYSICS LETTERS A, 1968, A 26 (07) : 315 - +

[2] FLYTZANIS C, 1968, PHYS REV, V178, P1218

[3] LINEAR ELECTROOPTIC EFFECT IN GEXSI1-X SI STRAINED-LAYER SUPERLATTICES [J]. ELECTRONICS LETTERS, 1986, 22 (15) : 819 - 821

[4] NONLINEAR OPTICAL SUSCEPTIBILITIES IN GROUP-4 AND 3-5 SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1968, 171 (03): : 891 - +

[5] OBSERVATION OF ORDER-DISORDER TRANSITIONS IN STRAINED-SEMICONDUCTOR SYSTEMS [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (07) : 765 - 768

[6] OURMAZD A, COMMUNICATION

[7] OURMAZD A, 1985, MATERIALS RES SOC S, V56

[8] PAULING L, 1935, INTRO QUANTUM MECHAN

[9] BAND ALIGNMENTS OF COHERENTLY STRAINED GEXSI1-X/SI HETEROSTRUCTURES ON LESS-THAN-001-GREATER-THAN GEYSI1-Y SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1986, 48 (08) : 538 - 540

[10] Single-crystal silicon: a new material for 1.3 and 1.6 μm integrated-optical components [J]. ELECTRONICS LETTERS, 2009, : 26 - 27

[1] SECOND ORDER OPTICAL SUSCEPTIBILITY OF 3-5 COMPOUNDS [J]. PHYSICS LETTERS A, 1968, A 26 (07) : 315 - +

[2] FLYTZANIS C, 1968, PHYS REV, V178, P1218

[3] LINEAR ELECTROOPTIC EFFECT IN GEXSI1-X SI STRAINED-LAYER SUPERLATTICES [J]. ELECTRONICS LETTERS, 1986, 22 (15) : 819 - 821

[4] NONLINEAR OPTICAL SUSCEPTIBILITIES IN GROUP-4 AND 3-5 SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1968, 171 (03): : 891 - +

[5] OBSERVATION OF ORDER-DISORDER TRANSITIONS IN STRAINED-SEMICONDUCTOR SYSTEMS [J]. PHYSICAL REVIEW LETTERS, 1985, 55 (07) : 765 - 768

[6] OURMAZD A, COMMUNICATION

[7] OURMAZD A, 1985, MATERIALS RES SOC S, V56

[8] PAULING L, 1935, INTRO QUANTUM MECHAN

[9] BAND ALIGNMENTS OF COHERENTLY STRAINED GEXSI1-X/SI HETEROSTRUCTURES ON LESS-THAN-001-GREATER-THAN GEYSI1-Y SUBSTRATES [J]. APPLIED PHYSICS LETTERS, 1986, 48 (08) : 538 - 540

[10] Single-crystal silicon: a new material for 1.3 and 1.6 μm integrated-optical components [J]. ELECTRONICS LETTERS, 2009, : 26 - 27