ABRUPT COMPOSITIONAL TRANSITION IN LUMINESCENT SI1-XGEX/SI QUANTUM-WELL STRUCTURES FABRICATED BY SEGREGANT ASSISTED GROWTH USING SB ADLAYER

被引：22

作者：

USAMI, N

FUKATSU, S

SHIRAKI, Y

机构：

[1] Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, Meguro-ku, Tokyo 153

来源：

APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 03期

关键词：

D O I：

10.1063/1.110052

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Luminescent Si0.8Ge0.2/Si single quantum well structures with abrupt interfaces were successfully grown by segregant assisted growth (SAG) using Sb adlayer. The emission energy shifted to the lower side compared to the sample grown without Sb adlayer due to the suppression of the surface segregation of Ge atoms. Improved abruptness of interfaces was confirmed by sputter depth profile measurement, where no segregation edge was seen in the sample grown by SAG technique. Light emitting p-i-n diode structure can be fabricated by utilizing the incorporation of Sb during SAG.

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页码：388 / 390

页数：3

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