INTERSUBBBAND ABSORPTION IN NARROW SI/SIGE MULTIPLE QUANTUM-WELLS WITHOUT INTERFACIAL SMEARING

被引：18

作者：

FUJITA, K ^{[1
]}

FUKATSU, S ^{[1
]}

SHIRAKI, Y ^{[1
]}

YAGUCHI, H ^{[1
]}

ITO, R ^{[1
]}

机构：

[1] UNIV TOKYO,FAC ENGN,DEPT APPL PHYS,BUNKYO KU,TOKYO 113,JAPAN

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 02期

关键词：

D O I：

10.1063/1.108220

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Si/Si1-xGex multiple quantum wells with abrupt heterointerfaces have been formed by segregant-assisted growth (SAG) with Sb. Distinct well-width dependence of intersubband absorption in the narrow quantum wells has been observed. The well-width dependence of the absorption peak energy is in good agreement with a calculation based on the Kronig-Penney model where interfacial smearing is taken to be less than 0.4 nm, suggesting the integrity of Si/Si1-xGex interfaces grown by SAG.

引用

页码：210 / 212

页数：3

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